概览

RBN75H65T1FPQ-A0 650V、75A 沟槽绝缘栅双极晶体管（IGBT）提供低集电极至发射极饱和电压、内置快速恢复二极管（FRD），可用于电源开关应用。 该器件采用 TO-247A 封装。

  • 沟槽栅极和薄晶圆技术（G8H 系列）
  • 内置快速恢复二极管，采用一个封装
  • 集电极至发射极饱和电压 VCE (sat) = 1.5V（典型值） （IC = 75A，VGE = 15V，Ta = 25 °C）
  • 质量等级：标准
  • 高速开关
  • 非短路专用

应用

  • UPS
  • 焊接
  • 光伏逆变器
  • 电源转换器系统

文档

设计和开发

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    Carrier Type
    Price (USD) | 1ku
    购买 / 样片
    器件号
    RBN75H65T1FPQ-A0#CB0
    circle有效
    memory
    view_in_ar
    可提供样片
    		 TO-247A Tube 4.555 获取样片,
    Parametric Table tips

    Tips for Using This Parametric Table:

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    • Document icon next to product name in row: View the featured document for this product
    • Chip icon next to the right of the document icon in row: View the block diagram for this product
    • Cart icon to the right of the chip icon: Indicates that samples are available for this product