概要

The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.

ISL70024SEH_ISL73024SEH Functional Diagram
ISL70024SEH_ISL73024SEH Functional Diagram
  • Very low rDS(ON) 45mΩ (typical)
  • Ultra low total gate charge 2.5nC (typical)
  • SEE hardness (see SEE report for details)
    • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
  • Radiation acceptance (see TID report)
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s) : 75krad(Si)
  • Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
    • Package area: 42mm2
  • Full military-temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C

アプリケーション

  • Switching regulation
  • Motor drives
  • Relay drives
  • Inrush protection
  • Down hole drilling
  • High reliability industrial

ドキュメント

設計・開発

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ISL70040SEHEV3Z Design Files
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ISL70040SEHEV3Z GaN FET and Driver Eval Board

ISL70040SEHEV3Z

Evaluation
詳しくはこちら

Evaluation Board for the ISL70040SEH and ISL70024SEH (200V GaN FET)

The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH...

主要ドキュメント:
ISL70040SEHEV3Z Evaluation Board Manual
ISL73040SEHEV4Z Evaluation Board

ISL73040SEHEV4Z

Evaluation
詳しくはこちら

耐放射線ローサイドGaN FETドライバおよびGaN FET

ISL73040SEHEV4Z評価ボードは、ISL73040SEHローサイドGaNドライバとISL73024SEH 200V GaN FETを使用してハーフブリッジパワーステージを構築する方法を示します。ISL73040SEHは、4.5Vゲートドライブ電圧(VDRV)で動作します。これはゲート電圧が...

主要ドキュメント:
ISL73040SEHEV4Z Evaluation Board Manual

ECADモデル

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ECADモデルを調べる
Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    DLA SMD
    Moisture Sensitivity Level (MSL)
    ご購入 / サンプル
    型名
    ISL70024SEHL/PROTO
    circleアクティブ
    memory
    view_in_ar
    サンプル入手可能
    		 CLCC Tray 1 Not Applicable サンプルを入手,
    ISL70024SEHML
    circleアクティブ
    memory
    view_in_ar
    		CLCC Tray 25 Not Applicable
    ISL70024SEHMX
    circleアクティブ
    memory
    view_in_ar
    		100
    ISL70024SEHX/SAMPLE
    circleアクティブ
    memory
    view_in_ar
    		PFL 5
    Parametric Table tips

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