Overview
Description
The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)
- Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
Comparison
Applications
Documentation
= Featured Documentation
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Type | Title | Date |
Datasheet | PDF 223 KB | |
Application Note | PDF 3.23 MB 日本語 | |
Guide | PDF 1.71 MB | |
Product Reliability Report | PDF 223 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
6 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
![Diagram of ECAD Models](/themes/idt8/images/ecad-models.jpg)