Power IGBTs for Power Factor Correction (PFC)

Renesas' insulated gate bipolar transistor (IGBT) product series for power factor correction (PFC) are recommended for 50kHz to 100kHz frequencies. These IGBTs are ideal for universal power supplies (UPS), solar power generation and welding applications.

Generation	Series	Features
G7H	65T5x series	650V IGBT for partial switching PFC, ultra-low VCE(sat), not guaranteed against short circuits, frequency: 100kHz or higher
G7H	65T4x series	650V IGBT for full switching PFC, ultra-high-speed switching, not guaranteed against short circuits, frequency: 20kHz or higher
G6H	60Fx Series	This series is not supported for new designs. Please use the 65T4x Series of products instead. 600V IGBT, low VCE(sat), not guaranteed against short circuits, frequency: 10kHz to 35kHz
G6H	60Dx Series	This series is not supported for new designs. Please use the 65T4x Series of products instead. 600V IGBT, low VCE(sat), tsc ≥3µs, frequency: 10kHz to 20kHz

Product Features

Main Use (Proportion)	Circuit Type (Proportion)	Package	Load Short Circuit	Current Rating	Characteristics	Diode	Product Series
Standard model	Partial switching *Other: 5%	TO-3PF	Unnecessary	25A to 30A	Ultra-low frequency >100Hz	Unnecessary	G7H T5 Series 30A: RJP65T54DPM
Mid-to-high models	Full switching *Other: 4%	TO-247	Unnecessary	20A to 45A	Ultra-high-speed turn-off	Unnecessary	G7H T4 Series 20A： RJP65T43DPM 40A： RJH65T46DPQ 45A： RJH65T47DPQ

IGBTs for Power Factor Correction

IGBTs for Partial Switching PFC

Features

Low loss VCE(sat) = 1.35V (typ.)
Isolated full-mold package: TO-3PF
High current tolerant: Icp = 200A

PFC IGBT for Airconditioner Unit Diagram

Competitive Comparison - Partial Switching PFC

Part Number	V_CES (V)	V_GES (V)	IC (A)		IC(peak)	V_CE(sat) (V)	Tj max (C)	Package
Part Number	V_CES (V)	V_GES (V)	25 °C	100 °C	(A)	V_CE(sat) (V)	Tj max (C)	Package
RJP65T54DPM	650	±30	60	30	200	1.35 (30A)	175	TO-3PF (isolated)
RJP65T14DPQ-A0	650	±30	100	50	120	1.4 (30A)	175	TO-247 (non-isolated)
Competitor's IGBT	600	±20	80	40	100	1.5 (30A)	175	TO-247 (non-isolated)

Power Factor Correction IGBT Features

IGBTs for Full Switching PFC

Features

VCES = 650V
Low noise and high-speed switching
Isolated full-mold package: TO-3PF - For low output
Non-isolated package: TO-247 - For high output

Power Factor Correction IGBT for Full Switching

Competitive Comparison - Full Switching PFC

	Part Number	V_CES (V)	V_GES (V)	IC (A)		V_CE(sat) (V)	Tj max (°C)	Package
	Part Number	V_CES (V)	V_GES (V)	25 °C	100 °C	V_CE(sat) (V)	Tj max (°C)	Package
RJP65T43DPM	650	±30	40	20	1.8 (20A)	175	TO-3PFM (isolated)
RJH65T46DPQ-A0	650	±30	80	40	1.8 (40A)	175	TO-247 (non-isolated)
RJH65T47DPQ-A0	650	±30	90	45	1.8 (45A)	175	TO-247 (non-isolated)
Company B	650	±20	80	40	1.9 (40A)	175	TO-3PN (non-isolated)

To inquire about sample availability, contact a Renesas sales office or sales representative.

Application Performance Comparison - IGBTs for Full Switching PFC

IGBT Full Switching PFC - Application Performance

Documentation


Brochure	Discrete & Power Devices Brochure PDF 1.92 MB	Oct 11, 2021
Application Note	TO-247plus Package PDF 506 KB 日本語	Jun 19, 2019
Application Note	Usage Notes for Paralleled IGBT PDF 941 KB 日本語	Dec 5, 2018
Application Note	IGBT Application Note PDF 1.05 MB 日本語	Jul 13, 2018
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