Overview
Description
The RJP65T54DPM-A0 650V, 60A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-3PFP package.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35V typ. (at IC = 30A, VGE = 15 V, Ta = 25 °C)
- Isolated package
- Trench gate and thin wafer technology (G7H series)
- High-speed switching
- Operation frequency (50Hz ≤ f ˂ 20kHz)
- Not guarantee short circuit withstand time
Comparison
Applications
- Partial switching circuit
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-3PFP | 1.77 | Get Samples, |
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