Gallium Nitride (GaN) Power Solutions

Transforming Renesas' power portfolio with the addition of GaN devices and technology.

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Visit the press release “Renesas Completes Acquisition of Transphorm” (June 20, 2024)

Power systems today increasingly demand higher efficiency and power density in a number of applications that require expanded coverage of voltage ranges with faster switching frequencies than traditional silicon-based devices. Wide-bandgap devices are not only seeing significant growth, they are also uniquely positioned to address the demands of today’s complex power systems.

The addition of Transphorm’s GaN technology and devices to Renesas’ power portfolio strategically positions Renesas to serve customers with a broader offering, making it one of the most comprehensive in the industry. Renesas’ existing discrete portfolio, consisting of IGBTs, SiC and Si Power FETs, now with the addition of GaN devices, offers the maximum flexibility to customers for system design. Transphorm’s GaN technology is unique, differentiated and based on its one-core platform vertical integration model, which supports the largest range of power conversion requirements (45 W to 10+ kW) across the widest range of power applications products in the market today. Operated on its own wafer process, it delivers 25% better loss/performance compared to competing GaN products, another key advantage. Industry-leading IP, with access to more than 1000 patents that span the entire GaN value chain from epi materials to packaging and applications, further drives differentiation and customer innovation.

To address our customers’ growing needs in the automotive, industrial, renewable energy and consumer space, Renesas’ wide range of power management solutions now combines a complete wide-bandgap offering, encompassing leading-edge GaN products with vertically integrated wafer manufacturing, with industry-best controllers and driver ICs for comprehensive solutions.