Overview
Description
Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200 V/150 A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
Features
- 1200V Trench & field stop AE4 technology
- Low collector to emitter saturation voltage (1.6V typ.)
- Low Switching loss
- Easy paralleling by internal Rg
- AEC Q101 (HTRB, HTGB) qualified
Comparison
Applications
Applications
- Hybrid and electric vehicle inverter
Documentation
= Featured Documentation
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Type | Title | Date |
Datasheet | PDF 139 KB | |
Application Note | PDF 1.11 MB 日本語 | |
Application Note | PDF 648 KB 日本語 | |
Application Note | PDF 941 KB 日本語 | |
Application Note | PDF 1.05 MB 日本語 | |
5 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
![Diagram of ECAD Models](/themes/idt8/images/ecad-models.jpg)
Videos & Training
News & Blog Posts
Blog Post | Jul 13, 2021 |