Overview

Description

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

Features

  • Low on-state resistance
    RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
    RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
    RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
  • 2.5 V drive available
  • Avalanche capability ratings

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 270 KB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
3 items

Design & Development

Models