Overview

Description

The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance
  • Gate to Source ESD protection diode built-in

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.38 MB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 224 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
6 items

Design & Development

Models