Overview
Description
Renesas' RJH60D1DPP-A0 600V, 10A insulated-gate bipolar transistors (IGBT) featuring trench gate and thin wafer technology, built-in fast recovery diode (100ns typ.) in one package, and low collector to emitter saturation voltage can be used for power switching applications.
Features
- Trench gate and thin wafer technology
- Built-in fast recovery diode (100ns typ.) in one package
- Low collector to emitter saturation voltage
VCE(sat) = 1.9V typ. (at IC = 10A, VGE = 15V, Tc = 25 °C) - High-Speed switching
tf = 75ns typ. (at Vcc = 300V, VGE = 15V, Ic = 10A, Rg = 5Ω, inductive load) - Short circuit withstands time (5µs typ.)
- Applications: Inverter
- Quality grade: Standard
Comparison
Applications
- Power switching
- Inverter
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-220FPA | Tube |
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