Overview
Description
The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 30A, VGE = 15V, Ta = 25 °C)
- Built-in fast recovery diode in one package
- Trench gate and thin wafer technology
- High-Speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V, IC = 30A, Rg = 10Ω, Ta=25 °C , inductive load)
- Operation frequency (20kHz ≤ f ˂ 40kHz)
Comparison
Applications
- Power switching
- Power factor correction (PFC) circuits
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-3PFP | 2.88 |
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