Overview
Description
The RJP65S08DWS 650V, 200A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in a Sawn package.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 200A, VGE = 15V, TC = 25 °C)
- High-speed switching
- Short circuit withstands time (10μs min.)
Comparison
Applications
- Inverters
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Sawn |
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