Overview

The RJP65S08DWS 650V, 200A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in a Sawn package.

  • Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 200A, VGE = 15V, TC = 25 °C)
  • High-speed switching
  • Short circuit withstands time (10μs min.)

Applications

  • Inverters

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    RJP65S08DWS-80#W0
    circleActive
    memory
    view_in_ar
    		Sawn
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