Overview
Description
The RJP65T43DPQ-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-247A package.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
- Trench gate and thin wafer technology (G7H series)
- High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V, IC = 20A, Rg = 10Ω, Ta = 25 °C, inductive load)
- Operation frequency (20kHz ≤ f ˂ 100kHz) Rating of collector current IC = 30A (at Tc = 100 °C)
- Not guarantee short circuit withstand time
Comparison
Applications
- Power Factor Correction (PFC) circuit
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-247A | Tube | 1.664 | Get Samples, |
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