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Overview

Description

The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP100N055MDH, NP100N055NDH RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.6 mΩ MAX. (VGS = 4.5 V, ID = 50 A) NP100N055PDH RDS(on)1 = 4.4 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.2 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
  • High avalanche energy, High avalanche current
  • Logic level drive Type
  • Low input capacitance Ciss = 9500 pF TYP. (VDS = 25 V)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 357 KB
Guide PDF 2.76 MB
Guide PDF 796 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models