Overview
Description
The Intersil HCS00MS is a radiation hardened quad 2-input NAND gate. A high on both inputs forces the output to a low state. The HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS logic family. The HCS00MS is supplied in a 14-lead Ceramic Flatpack (K suffix) or an SBDIP package (D suffix).
Features
- 3 micron radiation hardened SOS CMOS
- Total dose 200K RAD (Si)
- SEP effective LET no upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) immunity < 2 x 10-9 errors/bit-day (Typ)
- Dose rate survivability: >1 x 1012 RAD (Si)/s
- Dose rate upset >1010 RAD (Si)/s 20ns pulse
- Cosmic ray upset immunity < 2 x 10-9 errors/gate day (Typ)
- Latch-up free under any conditions
- Military temperature range: -55 °C to +125 °C
- Significant power reduction compared to LSTTL ICs
- DC operating voltage range: 4.5V to 5.5V
- Input logic levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input current levels Ii ≤ 5µA at VOL, VOH
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 355 KB | |
| Brochure | PDF 467 KB | |
| Price Increase Notice | PDF 360 KB | |
| Other | ||
| Product Advisory | PDF 499 KB | |
| Product Change Notice | PDF 230 KB | |
| Application Note | PDF 338 KB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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