Overview
Description
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.
Features
- High Gain-Bandwidth Product (fT) 10GHz
- High Power Gain-Bandwidth Product 5GHz
- High Current Gain (hFE) 70
- Noise Figure (Transistor) 3.5dB
- Low Collector Leakage Current <0.01nA
- Excellent hFE and VBE Matching
- Pin-to-Pin to UPA102G
- Pb-Free Plus Anneal Available (RoHS Compliant)
Comparison
Applications
Applications
- Single Balanced Mixers
- Wide Band Amplification Stages
- Differential Amplifiers
- Multipliers
- Automatic Gain Control Circuits
- Frequency Doublers, Tripplers
- Oscillators
- Constant Current Sources
- Wireless Communication Systems
- Radio and Satellite Communications
- Fiber Optic Signal Processing
- High Performance Instrumentation
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
HFA3102BZ Active Samples Available
Buy Now
|
SOICN | Tube | 3 | Get Samples, | |
| SOICN | Reel | 3 | 4.5 |
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