Renesas offers the next-generation magnetoresistive random-access memory (MRAM) by utilizing a proprietary technology called perpendicular magnetic-tunnel-junction STT (spin-transfer torque) to achieve best-in-class non-volatile memory with long data retention and fast serial and parallel interfaces. With a wide range of memory densities and high operating temperatures, Renesas’ MRAM is suited for applications ranging from factory automation equipment requiring fast backup data retrieval to medical data units with long-term data storage requirements.
Renesas MRAM product offerings include:
- High memory density
- SPI 4Mb to 16Mb
- Parallel 4Mb to 32Mb
- Low active write and read currents
- Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, and parallel up to 108MHz
- Low operating power from 1.71V to 3.6V (SPI interface) and 2.7V to 3.6V (parallel interface)
- Operating temperature from -40 °C to 105 °C
About MRAM Memory
An MRAM is a type of memory that stores data within cells of magnetic elements. Two ferromagnetic plates separated by a thin insulator hold a magnetization. One plate is a permanent magnet set to a particular polarity. The second plate’s magnetization is changed with an external field. During programming, this field can produce a low or high resistance state, respectively representing “0” or “1” in data storage.
