Overview

Renesas' Fast Recovery Diodes (FRD) achieve low forward voltage and fast and soft recovery characteristics with ultra-thin wafer and lifetime control technology. This 1200V/200A diode is optimized for high-power applications such as inverters.

  • Fast Recovery Diode technology
  • Low forward voltage VF = 1.9V typ. (at IF = 200A, Tj = 25°C)
  • Low Switching loss
  • Easy paralleling by internal Rg

Applications

  • High speed switching

Documentation

= Featured Documentation
Type Title Date
Datasheet
RJU1C16DWA Datasheet
PDF 252 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Application Note
Usage Notes for Paralleled IGBT
PDF 941 KB 日本語
Application Note
IGBT Application Note
PDF 1.05 MB 日本語
4 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    RJU1C16DWA-00#W0
    circleActive
    memory
    view_in_ar
    		Wafer
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