Overview

Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.

Our 1800V - 200A/100A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.

  • Renesas 8th-generation trench IGBT
  • Short circuit withstands time (10µs min.)
  • Optimized for high-power application
  • Unsawn wafer
  • Wafer size = 200mm
  • Quality grade: Standard

Applications

  • Wind power generation
  • Solar inverters

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Buy / Sample
    Part Number
    RBN100N180S2HFWA-850#FF0
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    		Wafer
    RBN100N180S2HFWA-8F0#FF0
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    view_in_ar
    		Wafer
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