Overview

Description

Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.

Our 1800V - 300A/150A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.

Features

  • Renesas 8th-generation trench IGBT
  • Short circuit withstands time (10µs min.)
  • Optimized for high-power application
  • Unsawn wafer 
  • Wafer size = 200mm
  • Quality grade: Standard

Comparison

Applications

Applications

  • Wind power generation
  • Solar inverters

Documentation

Design & Development

Models