Overview

Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure.

  • The lowest conduction loss on the market
  • Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness
  • Easier parallel operation by suppressing Vth variation
  • Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area

This 750V/220A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

  • 750V trench & field stop AE5 technology 
  • Low collector to emitter saturation voltage (1.35V typ.)
  • Low switching loss
  • Easy paralleling by internal Rg and narrow VGE(th) distribution
  • Solderable and sinterable top metal
  • AEC Q101 (HTRB, HTGB) qualified

Applications

  • Hybrid and electric vehicle inverter

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Buy / Sample
    Part Number
    RBN220N75A5PJWS-000#FF0
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