Overview
Description
Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure.
- The lowest conduction loss on the market
- Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness
- Easier parallel operation by suppressing Vth variation
- Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area
This 750V/220A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
Features
- 750V trench & field stop AE5 technology
- Low collector to emitter saturation voltage (1.35V typ.)
- Low switching loss
- Easy paralleling by internal Rg and narrow VGE(th) distribution
- Solderable and sinterable top metal
- AEC Q101 (HTRB, HTGB) qualified
Comparison
Applications
- Hybrid and electric vehicle inverter
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Sawn Wafer |
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