Overview
Description
The RBN25H125S1FPQ-A0 1250V, 25A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.
Features
- Trench gate and thin wafer technology (G8H series)
- Built-in fast recovery diode in one package
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 25A, VGE = 15V, Ta = 25 °C)
- Quality grade: Standard
- High-speed switching
- Short circuit withstands time (10µs min.)
Comparison
Applications
- UPS
- Welding
- Photovoltaic inverters
- Power converter systems
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-247A | Tube | 3.902 | Get Samples, |
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