Overview
Description
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.
The RBN25N125S1UFWA 1250V/25A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.
Features
- Renesas generation 8th Trench IGBT
- Low collector to emitter saturation voltage
- High speed switching
- Short circuit withstands time (10µs min.)
- Unsawn wafer
- Wafer size = 200mm
- Quality grade: Standard
Comparison
Applications
- UPS
- Welding
- Photovoltaic inverters
- Power converter system
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
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