Overview

The RBN40H125S1FPQ-A0 1250V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

  • Trench gate and thin wafer technology (G8H series)
  • Built-in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 40A, VGE = 15V, Ta = 25 °C)
  • Quality grade: Standard
  • High-speed switching
  • Short circuit withstands time (10µs min.)

Applications

  • UPS
  • Welding
  • Photovoltaic inverters
  • Power converter systems

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

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    RBN40H125S1FPQ-A0#CB0
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    		TO-247A Tube 1 Get Samples,
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