Overview

The RBN40H65T1FPQ-A0 650V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

  • Trench gate and thin wafer technology (G8H series)
  • Built-in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 40A, VGE = 15V, Ta = 25 °C)
  • Quality grade: Standard
  • High-speed switching
  • Non-specification for short circuit

Applications

  • UPS
  • Welding
  • Photovoltaic inverters
  • Power converter systems

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
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    Part Number
    RBN40H65T1FPQ-A0#CB0
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    Samples Available
    		 TO-247A Tube 1 Get Samples,
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