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Overview

Description

Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.

The RBN40N65T1UFWA 650V/40A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.

Features

  • Renesas generation 8th Trench IGBT
  • Low collector to emitter saturation voltage
  • High speed switching
  • Unsawn wafer
  • Wafer size = 200mm
  • Quality grade: Standard

Comparison

Applications

  • UPS
  • Welding
  • Photovoltaic inverters
  • Power converter system

Documentation

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models