Overview

The RBN50H65T1FPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

  • Trench gate and thin wafer technology (G8H series)
  • Built-in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 50A, VGE = 15V, Ta = 25 °C)
  • Quality grade: Standard
  • High-speed switching
  • Non-specification for short circuit

Applications

  • UPS
  • Welding
  • Photovoltaic inverters
  • Power converter systems

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Price (USD) | 1ku
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    Part Number
    RBN50H65T1FPQ-A0#CB0
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    Samples Available
    		 TO-247A Tube 3.581 Get Samples,
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