Overview

The RJH65T46DPQ-A0 650V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power factor correction (PFC) circuit applications. It is available in a TO-247A package type.

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 40A, VGE = 15V, Ta = 25 °C)
  • Built-in fast recovery diode in one package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 40A, Rg = 10Ω, Ta = 25 °C, Inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz)
  • Not guarantee short circuit withstand time

Applications

  • Power Factor Correction (PFC)

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

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    RJH65T46DPQ-A0#T0
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    		TO-247A Tube Get Samples,
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