Overview

Description

Renesas' AE4 IGBTs use a unique trench gate configuration in its process structure. These devices offer low saturation voltage without sacrificing robustness, while also minimizing switching losses. This 1200V/150A IGBT is optimized for high-power applications such as inverters.

Features

  • 1200V AE4 Trench & Field Stop Technology
  • Low collector to emitter saturation voltage VCE (sat) = 1.5V typ. (at IC = 150A, VGE = 15V, Tj = 25°C)
  • Low switching loss
  • Easy paralleling by internal Rg

Comparison

Applications

Applications

  • High speed switching

Documentation

Design & Development

Models