Overview
Description
Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200V/150A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
Features
- 1200V Trench & field stop AE4 technology
- Low collector to emitter saturation voltage (1.5V typ.)
- Low Switching loss
- Easy paralleling by internal Rg
- AEC Q101 (HTRB, HTGB) qualified
Comparison
Applications
Applications
- Hybrid and electric vehicle inverter
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Videos & Training
News & Blog Posts
Blog Post | Jul 13, 2021 |