Overview

Description

Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200V/150A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

Features

  • 1200V Trench & field stop AE4 technology 
  • Low collector to emitter saturation voltage (1.5V typ.)
  • Low Switching loss
  • Easy paralleling by internal Rg
  • AEC Q101 (HTRB, HTGB) qualified

Comparison

Applications

Applications

  • Hybrid and electric vehicle inverter

Documentation

Design & Development

Models