Overview

Renesas' AE4 IGBTs use a unique trench gate configuration in its process structure. These devices offer low saturation voltage without sacrificing robustness, while also minimizing switching losses. This 1200V/200A IGBT is optimized for high-power applications such as inverters.

  • 1200V AE4 Trench & Field Stop Technology
  • Low collector to emitter saturation voltage VCE (sat) = 1.5V typ. (at IC = 200A, VGE = 15V, Tj = 25°C)
  • Low Switching loss
  • Easy paralleling by internal Rg

Applications

High speed switching

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    RJP1C15DWA-00#W0
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    memory
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    		Wafer
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