Overview
Description
Renesas' AE4 IGBTs use a unique trench gate configuration in its process structure. These devices offer low saturation voltage without sacrificing robustness, while also minimizing switching losses. This 1200V/200A IGBT is optimized for high-power applications such as inverters.
Features
- 1200V AE4 Trench & Field Stop Technology
- Low collector to emitter saturation voltage VCE (sat) = 1.5V typ. (at IC = 200A, VGE = 15V, Tj = 25°C)
- Low Switching loss
- Easy paralleling by internal Rg
Comparison
Applications
High speed switching
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Wafer |
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