Overview
Description
The RJP1CS06DWS 1250V, 100A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in a Sawn wafer package type.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 100A, VGE = 15V, Tc = 25 °C)
- High-Speed switching
- Short circuit withstands time (10μs min.)
Comparison
Applications
- Inverters
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Sawn |
Tips for Using This Parametric Table:
- Hide Filters button in header: Collapse or expands filters
- Column sort buttons in header: Sort Column alphabetically / numerically descending or ascending
- Reset button in header: Reset all filters to the page default
- Full Screen button in header: Expand the table to full screen view (user must close out of full screen before they can interact with rest of page)
- Export button in header: Export the filtered results of the table to an Excel document
- Filter parts search bar in header: Type to filter table results by part number
- Hide column button in column headers: Select to hide columns in table
- AND / OR toggle switches in header: Toggles the logic of this particular filter to be “AND” or “OR” logic for filtering results
- Multiselect checkboxes at beginning of each row in table: Select these checkboxes to compare products against each other
- Document icon next to product name in row: View the featured document for this product
- Chip icon next to the right of the document icon in row: View the block diagram for this product
- Cart icon to the right of the chip icon: Indicates that samples are available for this product