Overview
Description
The RJP1CS27DWT is a 1250V, 150A, single switch, insulated-gate bipolar transistor (IGBT) with a gate emitter voltage of -30V to 30V, saturated collector emitter voltage of 1.55V, a 150A to 300A DC collector current, and collector emitter voltage of 1250V.
Features
- Gate emitter voltage: -30V to 30V
- Saturated collector emitter voltage: 1.55V
- DC collector current: 150A to 300A
- Collector emitter voltage 1250V
- RoHS compliant
Comparison
Applications
- Inverters
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Chip |
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