Overview

The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 20A, Rg = 10Ω, Ta = 25 °C, Inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz)
  • Not guarantee short circuit withstand time

Applications

High speed switching

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Product Options

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    Pkg. Type
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    Part Number
    RJP65T43DPM-00#T1
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    Samples Available
    		 TO-3PFM Tube Get Samples,
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