Overview

The RJP65T54DPM-A0 650V, 60A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-3PFP package.

  • Low collector to emitter saturation voltage VCE(sat) = 1.35V typ. (at IC = 30A, VGE = 15 V, Ta = 25 °C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

Applications

  • Partial switching circuit

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

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    Pkg. Type
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    Price (USD) | 1ku
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    Part Number
    RJP65T54DPM-A0#T2
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    Samples Available
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    		TO-3PFP Get Samples,
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