Overview
Description
Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in their process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching loss. This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
Features
- 750V trench & field stop high AE4 technology
- Low collector to emitter saturation voltage VCE(sat) = 1.4V typ. (at IC = 300A, VGE = 15V, Tj = 25 ℃)
- Low switching loss
- Easy paralleling by internal Rg
- AEC Q101 (HTRB, HTGB) qualified
Comparison
Applications
- Hybrid and electric vehicle inverter
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Sawn Wafer |
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