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Overview

Description

The 2SK3069 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-resistance
    RDS(on) = 6 mΩ typ.
  • Low drive current
  • 4 V gate drive device can be driven from 5 V source

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 101 KB 日本語
Guide PDF 796 KB
Application Note PDF 648 KB 日本語
Technical Update PDF 92 KB 日本語
4 items