Overview

The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Low on-state resistance
    RDS(on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Documentation

= Featured Documentation
Type Title Date
Datasheet
N0412N Datasheet
PDF 478 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
2 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Price (USD) | 1ku
    Buy / Sample
    Part Number
    N0412N-S19-AY
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    Samples Available
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