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Overview

Description

The N0607N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A )
  • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V )
  • High current : ID(DC) = ±65A
  • RoHS Compliant
  • Quality Grade : Standard

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 661 KB
Guide PDF 796 KB
Application Note PDF 648 KB 日本語
3 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models