Overview
Description
The N0607N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance
RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) - Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V )
- High current : ID(DC) = ±65A
- RoHS Compliant
- Quality Grade : Standard
Comparison
Applications
Documentation
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Type | Title | Date |
Application Note | PDF 648 KB 日本語 | |
Datasheet | PDF 661 KB | |
2 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.