Overview
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
- Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
- High current rating: ID(DC) = ±100 A
- Designed for automotive application and AEC-Q101 qualified
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 216 KB | |
| Guide | PDF 2.76 MB | |
| Guide | PDF 796 KB | |
| Application Note | PDF 648 KB 日本語 | |
| Brochure | PDF 2.24 MB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
