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Overview

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 288 KB
Guide PDF 2.76 MB
Guide PDF 796 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models