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Overview

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
  • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 156 KB
Guide PDF 2.76 MB
Guide PDF 796 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models