Overview
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low input capacitance Ciss = 4400 pF TYP.
- Built-in gate protection diode
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 425 KB | |
| Guide | PDF 2.76 MB | |
| Guide | PDF 796 KB | |
| Application Note | PDF 648 KB 日本語 | |
| Brochure | PDF 2.24 MB | |
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