Overview
Description
The NP90N04MUH, NP90N04NUH, NP90N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP90N04MUH, NP90N04NUH RDS(on) = 4.1 mΩ MAX. (VGS = 10 V, ID = 45 A) NP90N04PUH RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
- High avalanche energy, High avalanche current
- Low input capacitance Ciss = 5500 pF TYP. (VDS = 25 V)
Comparison
Applications
Documentation
Featured Documentation
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Type | Title | Date |
Datasheet | PDF 353 KB | |
Guide | PDF 2.76 MB | |
Guide | PDF 796 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
5 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.