Overview

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

  • Logic level operation (–6 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Low on-resistance RDS(on) : 58 mΩ Typ, 75 mΩ Max (VGS = –10 V)
  • AEC-Q101 Compliant

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Price (USD) | 1ku
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    Part Number
    RJE0605JPD-00#J3
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    Samples Available
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    		DPAK(S) TO-252 / DPAK Embossed Tape 1 1.396 Get Samples,
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