Overview
Description
This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.
Features
- Built-in overtemperature shut-down circuit and current limitation circuit
- High endurance capability against short circuit
- Latch type shut-down operation (need 0 voltage recovery)
- Built-in current limitation circuit
- Low on-resistance RDS(on): 140 mΩ Typ, 260 mΩ Max (VGS = –10 V)
- Power supply voltage applies 12V
- AEC-Q101 Rev-C compliant
Comparison
Applications
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| SOP | SOP-8 / SOIC-8 |
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