Overview

This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.

  • Built-in overtemperature shut-down circuit and current limitation circuit
  • High endurance capability against short circuit
  • Latch type shut-down operation (need 0 voltage recovery)
  • Built-in current limitation circuit
  • Low on-resistance RDS(on): 140 mΩ Typ, 260 mΩ Max (VGS = –10 V)
  • Power supply voltage applies 12V
  • AEC-Q101 Rev-C compliant

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
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    Part Number
    RJE0629JSP-00#J0
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    		SOP-8 / SOIC-8
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