Overview

Description

This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.

Features

  • Logic level operation (4V gate drive)
  • Built-in overtemperature shut-down circuit and current limitation circuit
  • High endurance capability against short circuit
  • Temperature hysteresis type
  • High-density mounting
  • Built-in current limitation circuit
  • Power supply voltage applies 12V and 24V
  • AEC-Q101 Rev-E compliant

Comparison

Applications

Documentation

Design & Development

Models