Overview
Description
The F5280 is a 4-channel TRX half-duplex silicon IC designed using a SiGe BiCMOS process for 5G phased-array applications at n257/n261 bands. The core IC has flexible gain and phase control on each channel to achieve fine beam steering and gain compensation between radiating channels. The core design includes standard SPI protocol that operates up to 50MHz with fast beam-steering modes.
Features
- 25GHz to 31GHz operation
- 4 radiation channels
- 100ns typical RF switch Tx/Rx mode switching time
- 20ns typical gain and phase settling time
- 3° typical RMS phase error
- 0.4dB typical RMS gain error
- Advanced SPI with 4 state memory
- 6-bit chip address
- Integrated PTAT with external biasing
- Internal temperature sensor
- Up to 50MHz SPI control
- Programmable on-chip memory
- Supply voltage: +2.3V to +2.7V
- -40°C to +105°C ambient operating temperature range
- 3.6 × 3.6 mm, 49-BGA package
Comparison
Applications
Applications
Documentation
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Type | Title | Date |
Datasheet - Short-form | PDF 151 KB | |
Guide | PDF 2.24 MB | |
Product Brief | PDF 728 KB | |
3 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Videos & Training
Tumay delivers an overview of designing mmWave 5G phased arrays and how to differentiate your designs with the unique features of Renesas active beamforming ICs.
News & Blog Posts
News | Nov 10, 2021 | ||
News | Sep 19, 2017 |