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Overview

Description

The Renesas F6513SEVS Evaluation Kit is designed to reduce the learning cycle, build system-level confidence and enable a rapid time to market with the F6513 IC. The kit includes all the essential components required for the rapid validation and evaluation of the electrical performance characteristics of the F6513 Active Beamforming IC. 

Included Components:

  • RFIC Evaluation Board
  • Digital Interface Board
  • USB Cable (USB-A to USB-B micro)
  • Power Supply Cable
  • Digital Interconnect Cable
  • Renesas Beamforming EVS Software and Device Drivers (web download)
  • RF De-Embed Files (web download)

Features

The Renesas F6513 Evaluation Kit includes the following features to enable rapid learning and precise and thorough evaluation of the F6513 IC:

  • 50Ω 2.92mm interface to RF IOs
  • De-embed files for shifting measurement plane to the I/O balls
  • Standard header interface for DC supply
  • Jumper configurable IC SPI address
  • Clip-on test point access for voltage sense
  • DC supply bypassing capacitors
  • A trigger output for transient measurements
  • Renesas beamforming software with intuitive graphical user interface  
  • Individual channel and chip-level Enable, Gain, Phase and Bias controls
  • Data logging of all programming commands within GUI
  • User definable beam lookup tables and gain mapping tables

Applications

Documentation

Type Title Date
Manual - Hardware Log in to Download PDF 2.02 MB
Schematic Log in to Download PDF 445 KB
2 items

Design & Development

Software & Tools

Software Downloads

Type Title Date
Software & Tools - Software Log in to Download ZIP 2.39 MB
Software & Tools - Evaluation Software Log in to Download ZIP 3.84 MB
Software & Tools - Software ZIP 1.31 MB
PCB Design Files Log in to Download ZIP 2.00 MB
4 items

Videos & Training

IDT RF Product Benefits Overview

This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.

Transcript

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.