Evaluation Board for F0111 RF Amplifier
The F0111EVB is a fully populated evaluation board specifically designed to evaluate the F0111 RF Amplifier.
Overview
Description
The F0111 is a dual path 2200MHz to 4200MHz High Gain / Ultra-Low Noise Amplifier (LNA) that is used in receiver applications.
The F0111 LNA is operated as a balanced amplifier where the inputs and outputs are combined using external 90° couplers and provides 18.5dB of gain with 0.55dB noise figure and 38.5dBm OIP3 performance at 2600MHz. The device uses a single 5V supply and 90mA typical of total ICC.
The F0111 is packaged in a 4mm × 4 mm, 16-VFQFPN with 50Ω single-ended RF input and output impedances for ease of integration into the signal path.
Features
- 2200MHz to 4200MHz operating range
- 18.5dB typical Gain
- 0.55dB typical NF
- 18.5 typical OIP3
- 50Ω Single-ended Input/Output impedances
- +5V power supply
- ICC = 45mA per channel
- Independent Channel Standby modes for power savings
- 1.8V Logic Standby control
- Operating temperature (TEP) range: -40 °C to +105 °C
- 4mm x 4 mm, 16-VFQFPN package
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 1.13 MB | |
| Guide | PDF 2.24 MB | |
| Product Change Notice | PDF 550 KB | |
| Product Brief | PDF 983 KB | |
| Product Brief | PDF 506 KB | |
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Design & Development
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 16 | I | Yes | Tray | 1 | 4.787 | Get Samples, | |
| VFQFPN | 16 | I | Yes | Reel | 1 | Get Samples, |
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- Chip icon next to the right of the document icon in row: View the block diagram for this product
- Cart icon to the right of the chip icon: Indicates that samples are available for this product
Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
